A. Lee Graham Reporter lgraham@bizpress.net
TriQuint Semiconductor Inc., with operations in Richardson, has produced the industry’s first gallium nitride transistors using wafers that reduce semiconductor temperatures while maintaining high radio-frequency performance. The technology allows new generations of radio-frequency amplifiers up to three times smaller or offering up to three times the power of today’s gallium-nitride solutions, according to a company release.. “By increasing the thermal conductivity and reducing device temperature, we are enabling new generations of GaN (gallium nitride) devices that may be much smaller than today’s products,” said James L. Klein, vice president and general manager for the company’s infrastructure and defense products division, commenting in a news release. “This gives significant RF (radio frequency) design and operational benefits for our commercial and defense customers,” Klein said. Operating temperature largely determines high performance semiconductor reliability, the company pointed out. It’s especially critical for gallium nitride devices capable of high power densities. In March, TriQuint received an award at the Compound Semiconductor Industry Awards 2013 in Frankfurt, Germany for its gallium nitride-on-diamond breakthrough. Klein emphasized that unlocking the true potential such circuits will hinge on achievements like those of TriQuint’s advanced research and development program. TriQuint demonstrated its new gallium nitride-on-diamond, high electron mobility transistors in conjunction with partners at the University of Bristol, Group4 Labs and Lockheed Martin Corp. under the Defense Advanced Research Projects Agency’s (DARPA) Near Junction Thermal Transport program. TriQuint Semiconductor, based in Hillsboro, Ore. and with other engineering and manufacturing facilities, provides radio-frequency solutions and foundry services for communications, defense and aerospace companies worldwide. More information is available at www.triquint.com.